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HongKong Double Light Electronics Technology Co. Ltd
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1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

HongKong Double Light Electronics Technology Co. Ltd
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HongKong Double Light Electronics Technology Co. Ltd
City: Shenzhen
Province/State: Guangdong
Country/Region: China
Tel: 86-755-82853859
Contact Person:
Mr Rony Qiu

1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

Brand Name : Double Light
Model Number : DL-R1206PD
Certification : ISO9001:2008,Rosh
Place of Origin : China
MOQ : 1000 PCS
Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability : 15,000,000pcs per Day
Delivery Time : 5-7 working days after received your payment
Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Power Dissipation : 00MW
Supply Voltage : 3-5V
Collector-Emitter Voltage : 30V
Emitter-Collector-Voltage : 5V
Power Supply Voltage : 0.8-1.5V
Dissipation Current : 1.0-1.5ma
Peak Wavelength : 800-1100nm
Reception Distance : 15 m
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1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application


Features:

  1. Fast response time.
  2. Outline Package:3.2x1.6x2.33mm
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. Package in 8mm tape on 7” diameter reel.
  6. The product itself will remain within RoHS compliant Version.

Descriptions:

  1. The 1206 SMD LED is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a black epoxy with flat top view lens.
  2. Due to its black epoxy, the device is spectrally matched to visible and infrared emitting diode.

Applications:

  1. Automatic door sensor.
  2. Infrared applied system.
  3. Counters and sorters.
  4. Encoders.
  5. Floppy disk drive.
  6. Optoelectronic switch.
  7. Video camera, tape and card readers.
  8. Position sensors.
  9. Copier.
  10. Game machine.
  11. Applicable to all kinds of mechanical keyboard launch requirements
  12. Suitable for all kinds of infrared transmitting and receiving equipment
  13. Infrared remote control transmitter is suitable for all kinds of electronic products
  14. Applicable to all kinds of small household electrical appliance products for reflection application

Part No.Chip MaterialLens ColorSource Color
DL-R1206PD-1PD120SiliconBlackPhototransistor

Absolute Maximum Ratings (Ta=25℃)

ParametersSymbolRatingUnit

Power Dissipation

At (or below) 25℃ free Air Temperature

PD100mW
Collector-Emitter VoltageVCEO30V
Emitter-Collector-VoltageVECO5V
Collector CurrentIC20mA
Operating TemperatureTopr-40 to +80
Storage TemperatureTstg-40 to +85
Soldering TemperatureTsol260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

ParametersSymbolMin.Typ.Max.UnitCondition
Collector-Emitter Breakdown VoltageBVCEO30------V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown VoltageBVECO5------V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation VoltageVCE(SAT)------0.40V

IC=2mA,

Ee=1mW/cm²

Collector Dark CurrentICEO------100nA

VCE=20V,

Ee=0mW/cm²

On State Collector CurrentIC(ON)0.100.50---mA

VCE=5V,

Ee=1mW/cm²

Optical Rise Time (10% to 90%)TR---15---μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%)TF---15---
Reception Angle1/2---30---Deg
Wavelength Of Peak SensitivityλP---940---nm
Rang Of Spectral Bandwidthλ0.5700---1200nm

*1: Pulse Width=100μs, Duty Cycle=1%.

*2: For 10 Seconds.

*3: AC For 1 minute, R.H.=40%~60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.


Electrical Optical Characteristics (Ta=25℃)


ParametersSymbolMin.Typ.Max.UnitTest condition
InputForward VoltageVF---1.201.50VIF=20mA
Reverse CurrentIR------10µAVR=4V
Terminal CapacitanceCt---30250pFV=0V, f=1KHz
OutputCollector Dark CurrentICEO------100nA

Vce=20V,

IF=0 mA

Collector-Emitter Breakdown VoltageVCEO35------V

IC=0.1mA,

IF=0mA

Emitter –Collector

Breakdown Voltage

VECO6------V

IE=10uA,

IF=0mA

Transfer CharacteristicsCollector CurrentIC2.50---30mA

VCE=5V,

IF=5mA

Current Transfer Ratio *CTR50---600%
Collector-Emitter Saturation VoltageVCE(sat)---0.100.20V

IF=20mA

Ic=1mA

Isolation ResistanceRISO5x10105x1011---DC 500V 40%~60% R.H.
Floating CapacitanceCf---0.61pFV=0V, f=1MHz
Cut-Off Frequencyfc---80---kHz

VCE =5V

Ic=2mA

RL=100 Ω

-3dB

Rise Time

(10% to 90%)

TR---418μs

VCE=2V,

IC=2mA,

RL=100Ω

Fall Time

(90% to 10%)

TF---318

* CRT=IC / IF × 100%.

Rank Table Of Current Transfer Ratio (CTR)


Rank MarkMin. (%)Max. (%)
L50100
A80160
B130260
C200400
D300600
L or A or B or C or D50600

Notes:

1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.

2. A range from 30cm to the arrival distance. Average value of 50 pulses

Package Dimension:


Product Tags:

940nm infrared led

      

ir emitting diode

      
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